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X-ray and ?-ray spectroscopy using a 2 × 2 GaAs p+-i-n+ diode array

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posted on 2023-06-09, 21:39 authored by Grammatiki LioliouGrammatiki Lioliou, Anna BarnettAnna Barnett
A GaAs 2 × 2 pixel monolithic X-ray detector array was fabricated from material grown by metalorganic vapour phase epitaxy. Each pixel was a 200 µm × 200 µm square mesa p+ -i-n+ photodiode with a 10 µm thick i layer. The array was electrically characterized and then each pixel was connected to the input of a custom-made, low noise, charge-sensitive preamplifier in turn. 55Fe X-ray, 109Cd X-ray and ?-ray, and 241Am X-ray and ?-ray spectra were accumulated at 20°C. Following this, the spectroscopic response of one of the pixels was investigated at temperatures = 100°C. With both the preamplifier and detector array operated at 100 °C, the energy resolution (Full Width at Half Maximum) was 1.61 keV ± 0.04 keV at 5.9 keV, 1.63 keV ± 0.06 keV at 22.16 keV, and 1.65 keV ± 0.08 keV at 59.54 keV. The results suggested that the pixels did not suffer from incomplete charge collection. The energy resolution achieved is the best reported so far for GaAs spectrometers at such high temperatures.

History

Publication status

  • Published

File Version

  • Accepted version

Journal

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

ISSN

0168-9002

Publisher

Elsevier

Volume

985

Article number

a164672

Pages

22.0

Department affiliated with

  • Physics and Astronomy Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2020-09-25

First Open Access (FOA) Date

2021-09-19

First Compliant Deposit (FCD) Date

2020-09-23

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