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Modelling radiation damage to pixel sensors in the ATLAS detector

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posted on 2023-06-09, 18:52 authored by N L Abraham, Benedict AllbrookeBenedict Allbrooke, Lily AsquithLily Asquith, Alessandro CerriAlessandro Cerri, Antonella De SantoAntonella De Santo, Samuel Jones, Fabrizio SalvatoreFabrizio Salvatore, Kate ShawKate Shaw, Thomas StevensonThomas Stevenson, K Suruliz, Mark SuttonMark Sutton, Fabio Tresoldi, Fabrizio Trovato, Iacopo Vivarelli, E Winkels, The ATLAS Collaboration, others
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (= 1015 1 MeV neq/cm2 ).

History

Publication status

  • Published

File Version

  • Published version

Journal

Journal of Instrumentation

ISSN

1748-0221

Publisher

IOP Publishing

Issue

6

Volume

14

Page range

P06012 1-51

Department affiliated with

  • Physics and Astronomy Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2019-09-17

First Open Access (FOA) Date

2019-09-17

First Compliant Deposit (FCD) Date

2019-09-02

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