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Flexible In-Ga-Zn-O thin-film transistors on elastomeric substrate bent to 2.3% strain

journal contribution
posted on 2023-06-08, 22:01 authored by G. Cantarella, Niko Munzenrieder, L. Petti, C. Vogt, L. Buthe, G. A. Salvatore, A. Daus, Gerhard Troster
In this letter, a photolithographic fabrication process is used to manufacture indium–gallium–zinc–oxide thin-film transistors (TFTs) with mobilities > 10 cm ^{2} /Vs directly on a 80 \mu text{m} thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.

History

Publication status

  • Published

Journal

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Issue

8

Volume

36

Page range

781-783

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2015-08-03

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