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Peierls barriers and core properties of partial dislocations in SiC

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posted on 2023-06-08, 08:12 authored by G Savini, M I Heggie, Sven Öberg
First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation cores and the Peierls barriers of the first kind are chargestate dependent. In intrinsic bulk the partials are stable in the neutral asymmetric reconstructions. These reconstructions have no deep states and are characterized by high Peierls barriers. In strongly doped regime the symmetric reconstructions can become more stable. These reconstructions are always electrically active with a half filled band across the band gap. In particular the symmetric reconstructions of the 30° partial have a lower Peierls barriers than the respective asymmetric ones and could be the cause of the 1.8 eV electroluminescence peak observed under carrier injection conditions.

History

Publication status

  • Published

ISSN

02555476

Issue

PART1

Volume

527-52

Page range

359-362

Presentation Type

  • paper

Event name

International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005);

Event location

Pittsburgh, PA; 18 September 2005 through 23 September 2005; Code 70892

Event type

conference

ISBN

978-087849425-5

Department affiliated with

  • Chemistry Publications

Notes

Published in: Materials Science Forum

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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