1367-2630_9_1_006.pdf (1.13 MB)
Electrical activity and migration of 90 degrees partial dislocations in SiC
journal contribution
posted on 2023-06-08, 05:38 authored by G Savini, M I Heggie, S Öberg, P R BriddonSiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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- Published
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- Published version
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New Journal of PhysicsPublisher
Institute of PhysicsIssue
6Volume
9Department affiliated with
- Chemistry Publications
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GS planned the work, ran the computer simulations and interpreted the results. GS is the main and corresponding author.Full text available
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2012-02-06First Open Access (FOA) Date
2016-03-22First Compliant Deposit (FCD) Date
2016-08-17Usage metrics
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