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Anomaly enhancement of the dislocation velocity in SiC

journal contribution
posted on 2023-06-07, 22:58 authored by Gianluca Savini, Giancarlo Savini, Angela Marocchi, Irene Suarez-Martinez, Gemma Haffenden, Malcolm I Heggie, Sven Öberg
Under forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections

History

Publication status

  • Published

Journal

Physica B: Condensed Matter

ISSN

09214526

Volume

401-40

Page range

62-66

Department affiliated with

  • Chemistry Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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