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Article

Cantarella, G, Ishida, K, Petti, L, Munzenrieder, N, Meister, T, Shabanpour, R, Carta, C, Ellinger, F, Troster, G and Salvatore, G A (2016) Flexible In-Ga-Zn-O based circuits with two and three metal layers: simulation and fabrication study. IEEE Electron Device Letters (99). p. 1. ISSN 0741-3106

Cantarella, G., Munzenrieder, N., Petti, L., Vogt, C., Buthe, L., Salvatore, G. A., Daus, A. and Troster, Gerhard (2015) Flexible In-Ga-Zn-O thin-film transistors on elastomeric substrate bent to 2.3% strain. IEEE Electron Device Letters, 36 (8). pp. 781-783. ISSN 0741-3106

Petti, L, Frutiger, A, Munzenrieder, N, Salvatore, G A, Buthe, L, Vogt, C, Cantarella, G and Troster, G (2015) Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length. IEEE Electron Device Letters, 36 (5). pp. 475-477. ISSN 0741-3106

Münzenrieder, N, Voser, P, Petti, L, Zysset, C, Buthe, L, Vogt, C, Salvatore, G A and Troster, G (2014) Flexible self-aligned double-gate IGZO TFT. IEEE Electron Device Letters, 35 (1). pp. 69-71. ISSN 0741-3106

Zysset, C, Münzenrieder, N, Petti, L, Buthe, L, Salvatore, G A and Troster, G (2013) IGZO TFT-based all-enhancement operational amplifier bent to a radius of 5 mm. IEEE Electron Device Letters, 34 (11). pp. 1394-1396. ISSN 0741-3106

Perumal, C, Ishida, K, Shabanpour, R, Boroujeni, B K, Petti, L, Münzenrieder, N S, Salvatore, G A, Carta, C, Troster, G and Ellinger, F (2013) A compact a-IGZO TFT model based on MOSFET SPICE level=3 template for analog/RF circuit designs. IEEE Electron Device Letters, 34 (11). pp. 1391-1393. ISSN 0741-3106

Kinkeldei, T, Münzenrieder, N, Zysset, C, Cherenack, K and Tröster, G (2011) Encapsulation for flexible electronic devices. IEEE Electron Device Letters, 32 (12). pp. 1743-1745. ISSN 0741-3106

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