Whitaker, M D C, Lioliou, G, Krysa, A B and Barnett, A M (2020) InGaAs x-ray photodiode for spectroscopy. Materials Research Express, 7 (10). a105901 1-5. ISSN 2053-1591
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Abstract
A prototype In0.53Ga0.47As p+ -i-n+ X-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of X-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an X-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (-40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting X-ray detection.
Item Type: | Article |
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Keywords: | InGaAs, GaInAs, X-ray detector, Photodiode, Spectroscopy |
Schools and Departments: | School of Mathematical and Physical Sciences > Physics and Astronomy |
SWORD Depositor: | Mx Elements Account |
Depositing User: | Mx Elements Account |
Date Deposited: | 25 Sep 2020 10:27 |
Last Modified: | 13 Oct 2020 12:45 |
URI: | http://sro.sussex.ac.uk/id/eprint/93943 |
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