Whitaker_2020_Mater._Res._Express_7_105901.pdf (599.21 kB)
InGaAs x-ray photodiode for spectroscopy
Version 2 2023-06-12, 09:30
Version 1 2023-06-09, 21:39
journal contribution
posted on 2023-06-12, 09:30 authored by Michael WhitakerMichael Whitaker, Grammatiki LioliouGrammatiki Lioliou, A B Krysa, Anna BarnettAnna BarnettA prototype In0.53Ga0.47As p+ -i-n+ X-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of X-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an X-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (-40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting X-ray detection.
History
Publication status
- Published
File Version
- Published version
Journal
Materials Research ExpressISSN
2053-1591Publisher
Institute of Physics PublishingExternal DOI
Issue
10Volume
7Page range
1-5Article number
a105901Pages
6.0Department affiliated with
- Physics and Astronomy Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2020-09-25First Open Access (FOA) Date
2020-10-13First Compliant Deposit (FCD) Date
2020-09-23Usage metrics
Categories
No categories selectedLicence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC