Whitaker, M D C, Lioliou, G, Krysa, A B and Barnett, A M (2020) InGaAs x-ray photodiode for spectroscopy. Materials Research Express, 7 (10). a105901 1-5. ISSN 2053-1591

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Abstract

A prototype In0.53Ga0.47As p+ -i-n+ X-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of X-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an X-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (-40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting X-ray detection.

Item Type:	Article
Keywords:	InGaAs, GaInAs, X-ray detector, Photodiode, Spectroscopy
Schools and Departments:	School of Mathematical and Physical Sciences > Physics and Astronomy
SWORD Depositor:	Mx Elements Account
Depositing User:	Mx Elements Account
Date Deposited:	25 Sep 2020 10:27
Last Modified:	13 Oct 2020 12:45
URI:	http://sro.sussex.ac.uk/id/eprint/93943

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