Zhao, S, Butera, S, Lioliou, G, Krysa, A B and Barnett, A M (2019) High temperature AlInP X-ray spectrometers. Scientific Reports. a12155. ISSN 2045-2322

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Abstract

Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tolerant photon counting X-ray detector by connecting it to a custom-made low-noise charge-sensitive preamplifier and illuminating it with an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). At 100 °C, the best energy resolutions (full width at half maximum at 5.9 keV) achieved using the 217 µm ± 15 µm diameter photodiode and the 409 µm ±28 µm diameter photodiode were 1.31 keV ± 0.04 keV and 1.64 keV ±0.08 keV, respectively. Noise analysis of the system is presented. The dielectric dissipation factor of Al0.52In0.48P was estimated as a function of temperature, up to 100 °C. The results show the performance of the thickest Al0.52In0.48P X-ray detectors so far reported at high temperature. The work has relevance for the development of novel space science instrumentation for use in hot space environments and extreme terrestrial applications.

Item Type:	Article
Additional Information:	A.M.B. acknowledges funding received from The Leverhulme Trust, UK, in the form of a 2016 Philip Leverhulme Prize. The authors are grateful to R.J. Airey and S. Kumar at the EPSRC National Epitaxy Facility for device fabrication.
Keywords:	X-ray spectroscopy; Photodiode; Aluminium indium phosphide; Dielectric dissipation factor; Temperature dependence
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Space Research Group
Depositing User:	Lucy Arnold
Date Deposited:	09 Sep 2019 17:43
Last Modified:	10 Sep 2019 07:02
URI:	http://sro.sussex.ac.uk/id/eprint/86052

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