Spina, Filippo, Costa, Júlio C and Munzenrieder, Niko (2019) Flexible IGZO thin-film transistors with liquid EGaln gate contacts. IEEE FLEPS 2019 : IEEE International Conference on Flexible and Printable Sensors and Systems, Glasgow, UK, July 7-10 2019. Published in: 2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS). 1-3. Institute of Electrical and Electronics Engineers ISSN 9781538693049

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Abstract

Flexible thin-film electronics leverage technological innovations in fields such as sensors, wearable Computing and healthcare. As these Systems are required to conform to non-planar surfaces, novel approaches are developed to provide stable performance under mechanical stress, and prevent crack formation. Liquid eutectic-Galn promises the realisation of self- healing, reconfigurable and bendable circuits. Here, a liquid EGaln-gate thin-film transistor is fabricated and characterised. The device yielded a carrier mobility of 7.9 cm 2 V –1 s –1 that increased by 0.36 cm 2 V 1 s –1 when bent to a 4 mm radius. These results promote the integration of highly deformable liquid materials into thin-film devices.

Item Type:	Conference Proceedings
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Sensor Technology Research Centre
Depositing User:	Niko Munzenrieder
Date Deposited:	22 Aug 2019 08:36
Last Modified:	22 Aug 2019 08:36
URI:	http://sro.sussex.ac.uk/id/eprint/85598

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