Knobelspies, S, Takabayashi, A, Daus, A., Cantarella, G, Münzenrieder, N and Tröster, G (2018) Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment. Solid-State Electronics, 150. pp. 23-27. ISSN 0038-1101

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Abstract

In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Sensor Technology Research Centre
Depositing User:	Niko Munzenrieder
Date Deposited:	10 Oct 2018 08:45
Last Modified:	06 Oct 2019 01:00
URI:	http://sro.sussex.ac.uk/id/eprint/79309

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