University of Sussex
Browse
submitted final.pdf (463.96 kB)

Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment

Download (463.96 kB)
journal contribution
posted on 2023-06-09, 15:26 authored by S Knobelspies, A Takabayashi, A. Daus, G Cantarella, Niko Munzenrieder, G Tröster
In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.

History

Publication status

  • Published

File Version

  • Accepted version

Journal

Solid-State Electronics

ISSN

0038-1101

Publisher

Elsevier

Volume

150

Page range

23-27

Department affiliated with

  • Engineering and Design Publications

Research groups affiliated with

  • Sensor Technology Research Centre Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2018-10-10

First Open Access (FOA) Date

2019-10-06

First Compliant Deposit (FCD) Date

2018-10-10

Usage metrics

    University of Sussex (Publications)

    Categories

    No categories selected

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC