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Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
journal contribution
posted on 2023-06-09, 15:26 authored by S Knobelspies, A Takabayashi, A. Daus, G Cantarella, Niko Munzenrieder, G TrösterIn this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.
History
Publication status
- Published
File Version
- Accepted version
Journal
Solid-State ElectronicsISSN
0038-1101Publisher
ElsevierExternal DOI
Volume
150Page range
23-27Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2018-10-10First Open Access (FOA) Date
2019-10-06First Compliant Deposit (FCD) Date
2018-10-10Usage metrics
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