Butera, S, Lioliou, G, Krysa, A B and Barnett, A M (2018) Temperature characterisation of spectroscopic InGaP X-ray photodiodes. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 908. pp. 277-284. ISSN 0168-9002

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Abstract

In this paper for the first time, an InGaP photodiode was used in a high temperature tolerant X-ray spectrometer. The use of InGaP in X-ray spectrometers shows a significant advance within this field allowing operation up to 100 °C. Such results are particularly important since GaP and InP (the InGaP binary parent compounds) are not spectroscopic even at room temperature. The best energy resolution (smallest FWHM) at 5.9 keV for the InGaP spectrometer was 1.27 keV at 100 °C and 770 eV at 20 °C, when the detector was reverse biased at 5 V. The observed FWHM were higher than the expected statistically limited energy resolutions indicating that other sources of noise contributed to the FWHM broadening. The spectrometer’s Si preamplifier electronics was the limiting factor for the FWHM rather than the InGaP photodiode itself. The InGaP electron-hole pair creation energy (εInGaP) was experimentally measured across the temperature range 100 °C to 20 °C. εInGaP was 4.94 eV ± 0.06 eV at 20 °C.

Item Type:	Article
Keywords:	InGaP; X-ray spectroscopy; electron-hole pair creation energy; semiconductor.
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Space Research Group
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Depositing User:	Silvia Butera
Date Deposited:	19 Sep 2018 14:22
Last Modified:	19 Sep 2018 15:23
URI:	http://sro.sussex.ac.uk/id/eprint/78863

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