Petti, Luisa, Greco, Emanuel, Cantarella, Giuseppe, Munzenrieder, Niko, Vogt, Christian and Troster, Gerhard (2018) Flexible In-Ga-Zn-O thin-film transistors with sub-300-nm channel lengths defined by two-photon direct laser writing. IEEE Transactions on Electron Devices, 35 (9). pp. 3796-3802. ISSN 0018-9383

PDF ((c) 2018 IEEE) - Accepted Version Download (800kB)

Abstract

In this work, the low-temperature (≤ 150 °C) fabrication and characterization of flexible Indium-Gallium-ZincOxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and lift-off. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2V -1 s -1 and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 µm), the TFTs yield a transit frequency of 80 MHz (at 8.5 V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6 mm radius, corresponding to 0.4 % tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nano-structures, and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Sensor Technology Research Centre
Depositing User:	Niko Munzenrieder
Date Deposited:	02 Aug 2018 08:44
Last Modified:	02 Jul 2019 14:45
URI:	http://sro.sussex.ac.uk/id/eprint/77473

View download statistics for this item

📧 Request an update