Flexible InGaZnO TFTs with fmax above 300 MHz

Munzenrieder, Niko, Ishida, Koichi, Meister, Tilo, Cantarella, Giuseppe, Petti, Luisa, Carta, Corrado, Ellinger, Frank and Troster, Gerhard (2018) Flexible InGaZnO TFTs with fmax above 300 MHz. IEEE Electron Device Letters, 39 (9). pp. 1310-1313. ISSN 0741-3106

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Abstract

n this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 μm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12)MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6% when a TFT is bent to a tensile radius of 3.5 mm.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 01 Aug 2018 15:34
Last Modified: 16 Jul 2019 13:31
URI: http://sro.sussex.ac.uk/id/eprint/77471

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