Addressable electron spin resonance using donors and donor molecules in silicos

Hile, Samuel J, Fricke, Lukas, House, Matthew G, Preretz, Eldad, Chen, Chin Yi, Wang, Yu, Broome, Matthew, Gorman, Samuel K, Keizer, Joris G, Rahman, Rajib and Simmons, Michelle Y (2018) Addressable electron spin resonance using donors and donor molecules in silicos. Science Advances, 4 (7). eaaq1459 1-7. ISSN 2375-2548

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Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Research Centres and Groups: Sussex Centre for Quantum Technologies
Subjects: Q Science > QC Physics > QC0170 Atomic physics. Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics
Depositing User: Samuel Hile
Date Deposited: 17 Jun 2019 13:51
Last Modified: 01 Jul 2019 12:30

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