Hile, Samuel J, Fricke, Lukas, House, Matthew G, Preretz, Eldad, Chen, Chin Yi, Wang, Yu, Broome, Matthew, Gorman, Samuel K, Keizer, Joris G, Rahman, Rajib and Simmons, Michelle Y (2018) Addressable electron spin resonance using donors and donor molecules in silicos. Science Advances, 4 (7). eaaq1459 1-7. ISSN 2375-2548

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Abstract

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.

Item Type:	Article
Schools and Departments:	School of Mathematical and Physical Sciences > Physics and Astronomy
Research Centres and Groups:	Sussex Centre for Quantum Technologies
Subjects:	Q Science > QC Physics > QC0170 Atomic physics. Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics
Depositing User:	Samuel Hile
Date Deposited:	17 Jun 2019 13:51
Last Modified:	01 Jul 2019 12:30
URI:	http://sro.sussex.ac.uk/id/eprint/76390

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