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Addressable electron spin resonance using donors and donor molecules in silicos
journal contribution
posted on 2023-06-09, 13:41 authored by Samuel HileSamuel Hile, Lukas Fricke, Matthew G House, Eldad Preretz, Chin Yi Chen, Yu Wang, Matthew Broome, Samuel K Gorman, Joris G Keizer, Rajib Rahman, Michelle Y SimmonsPhosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.
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Publication status
- Published
File Version
- Published version
Journal
Science AdvancesISSN
2375-2548Publisher
American Association for the Advancement of ScienceExternal DOI
Issue
7Volume
4Page range
1-7Article number
eaaq1459Department affiliated with
- Physics and Astronomy Publications
Research groups affiliated with
- Sussex Centre for Quantum Technologies Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2019-06-17First Open Access (FOA) Date
2019-06-17First Compliant Deposit (FCD) Date
2019-06-14Usage metrics
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