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Addressable electron spin resonance using donors and donor molecules in silicos

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posted on 2023-06-09, 13:41 authored by Samuel HileSamuel Hile, Lukas Fricke, Matthew G House, Eldad Preretz, Chin Yi Chen, Yu Wang, Matthew Broome, Samuel K Gorman, Joris G Keizer, Rajib Rahman, Michelle Y Simmons
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.

History

Publication status

  • Published

File Version

  • Published version

Journal

Science Advances

ISSN

2375-2548

Publisher

American Association for the Advancement of Science

Issue

7

Volume

4

Page range

1-7

Article number

eaaq1459

Department affiliated with

  • Physics and Astronomy Publications

Research groups affiliated with

  • Sussex Centre for Quantum Technologies Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2019-06-17

First Open Access (FOA) Date

2019-06-17

First Compliant Deposit (FCD) Date

2019-06-14

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