High temperature GaAs X-ray detectors

Lioliou, G, Whitaker, M D C and Barnett, A M (2017) High temperature GaAs X-ray detectors. Journal of Applied Physics, 122. p. 244506. ISSN 0021-8979

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Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to –20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at –20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at –20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science
Q Science > QC Physics
Q Science > QC Physics > QC0474 Radiation physics (General)
Depositing User: Grammatiki Lioliou
Date Deposited: 08 Jan 2018 11:35
Last Modified: 02 Jul 2019 17:00
URI: http://sro.sussex.ac.uk/id/eprint/72660

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Project NameSussex Project NumberFunderFunder Ref
In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining ApplicationsG1537STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/M004635/1