Single-charge detection by an atomic precision tunnel junction

House, M G, Peretz, E, Keizer, J G, Hile, S J and Simmons, M Y (2014) Single-charge detection by an atomic precision tunnel junction. Applied Physics Letters, 104 (11). p. 113111. ISSN 0003-6951

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We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5 nm wide and 17.2 nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52 nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Samuel Hile
Date Deposited: 15 Jan 2018 07:58
Last Modified: 02 Jul 2019 16:49

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