Petti, Luisa, Loghin, Florin, Cantarella, Giuseppe, Vogt, Christia, Munzenrieder, Niko, Abdellah, Alaa, Becherer, Markus, Haeberle, Tobias, Daus, Alwin, Salvatore, Giovanni, Troster, Gerhar and Lugli, Paolo (2017) Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology. IEEE Electron Device Letters, 38 (11). pp. 1536-1539. ISSN 0741-3106

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Abstract

In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated single walled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using a maximum process temperature of 150 °C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from 3.5 V/V up to 27.2 V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifiers.

Item Type:	Article
Additional Information:	© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Research Centres and Groups:	Sensor Technology Research Centre
Depositing User:	Niko Munzenrieder
Date Deposited:	23 Oct 2017 10:57
Last Modified:	11 Feb 2022 13:05
URI:	http://sro.sussex.ac.uk/id/eprint/70595

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