Butera_et_al-2017-Scientific_Reports.pdf (1.73 MB)
InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy
journal contribution
posted on 2023-06-09, 07:52 authored by Silvia Butera, Grammatiki LioliouGrammatiki Lioliou, A B Krysa, Anna BarnettAnna BarnettIn this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 µm diameter and two randomly selected 400 µm diameter In0.5Ga0.5P p+-i-n+ mesa photodiodes is reported; the i-layer of the p+-i-n+ structure was 5 µm thick. At room temperature, and under illumination from an 55Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 µm In0.5Ga0.5P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.
Funding
Royal Society; RS130515
In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining Applications; G1537; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M004635/1
STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/P001815/1
History
Publication status
- Published
File Version
- Published version
Journal
Scientific ReportsISSN
2045-2322Publisher
Nature Publishing GroupExternal DOI
Volume
7Page range
10206Department affiliated with
- Engineering and Design Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2017-09-11First Open Access (FOA) Date
2017-09-11First Compliant Deposit (FCD) Date
2017-09-11Usage metrics
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