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Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
Version 2 2023-06-13, 15:17
Version 1 2023-06-09, 05:30
journal contribution
posted on 2023-06-13, 15:17 authored by Luisa Petti, Pichaya Pattanasattayavong, Yen-Hung Lin, Niko Munzenrieder, Giuseppe Cantarella, Nir Yaacobi-Gross, Feng Yan, Gerhard Tröster, Thomas D AnthopoulosWe report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on freestanding plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V1 s 1 and 0.013 cm2 V1 s 1 , respectively, current on/off ratio in the range 102 –104 , and maximum operating voltages between 3.5 and 10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as 3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.
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Publication status
- Published
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- Published version
Journal
Applied Physics LettersISSN
0003-6951Publisher
AIP PublishingExternal DOI
Issue
11Volume
110Article number
a113504Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2017-03-17First Open Access (FOA) Date
2017-03-21First Compliant Deposit (FCD) Date
2017-03-17Usage metrics
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