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Direct growth of ZnSe and CdSe on (100) InAs substrates
journal contribution
posted on 2023-06-09, 05:30 authored by Silvia Butera, Richard T Moug, Peter Vines, Gerald S Buller, Kevin A PriorZnSe and CdSe layers have been grown on InAs substrates using molecular beam epitaxy (MBE) without the need for a III-V and II-VI dual chamber system. This paper reports on the optimisation of a chemical oxide removal process using sulphur passivation. This removes the need for conventional in vacuo oxide removal under As overpressure that is used to prevent the formation of high densities of In droplets. X-ray and photoluminescence characterisation of the samples confirms single crystal growth.
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Publication status
- Published
Journal
Physica Status Solidi (C)ISSN
1862-6351Publisher
WileyExternal DOI
Issue
7-8Volume
11Page range
1210-1212Department affiliated with
- Engineering and Design Publications
Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2017-03-17Usage metrics
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