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X-ray detection with zinc-blende (cubic) GaN Schottky diodes
journal contribution
posted on 2023-06-09, 02:08 authored by T Gohil, J Whale, Grammatiki LioliouGrammatiki Lioliou, S V Novikov, C T Foxon, A J Kent, Anna BarnettAnna BarnettThe room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200?µm and 400?µm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35?keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5?V reverse bias, the capacitances of the diodes were measured to be (84.05?±?0.01) pF and (121.67?±?0.02) pF, respectively. At -5?V reverse bias, the dark current densities of the diodes were measured to be (347.2?±?0.4) mA cm-2 and (189.0?±?0.2) mA cm-2, respectively. The Schottky barrier heights of the devices (0.52?±?0.07) eV and (0.63?±?0.09) eV, respectively, were extracted from the forward dark current characteristics.
Funding
High Efficiency Betavoltaic Cells; G1455; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M002772/1
University of Nottingham Impact Acceleration Account
PhD studentship; EPSRC
In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining Applications; G1537; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M004635/1
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- Published
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- Published version
Journal
Scientific ReportsISSN
2045-2322Publisher
Nature Publishing GroupExternal DOI
Volume
6Page range
29535Department affiliated with
- Engineering and Design Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2016-07-13First Open Access (FOA) Date
2016-07-13First Compliant Deposit (FCD) Date
2016-07-13Usage metrics
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