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Radio frequency electronics on plastic
presentation
posted on 2023-06-09, 02:01 authored by F Ellinger, K Ishida, R Shabanpour, T Meister, B K Boroujeni, C Carta, L Petti, G A Salvatore, G Tröster, Niko MunzenriederIn this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 µm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 µm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 - 20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.
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Publication status
- Published
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- Published version
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Page range
1-5Presentation Type
- paper
Event name
Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S InternationalEvent location
Porto de GalinhasEvent type
conferenceEvent date
3-6 November 2015Book title
2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)Department affiliated with
- Engineering and Design Publications
Notes
ISBN: 9781509004317Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2016-07-04First Open Access (FOA) Date
2016-07-04First Compliant Deposit (FCD) Date
2016-07-04Usage metrics
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