Multi-qubit_gate_with_trapped_ions_for_microwave_and_laser_based_implementation.pdf (1.2 MB)
Multi-qubit gate with trapped ions for microwave and laser-based implementation
journal contribution
posted on 2023-06-08, 20:32 authored by I Cohen, Sebastian WeidtSebastian Weidt, Winfried HensingerWinfried Hensinger, A RetzkerA proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented. In order to perform the multi-qubit interaction, a strong magnetic field gradient is required to couple the phonon-bus to the qubit states. The gate is performed using resonant microwave driving fields together with either a radio-frequency (RF) driving field, or additional detuned microwave driving fields. The gate is robust to ambient magnetic field fluctuations due to an applied resonant microwave driving field. Furthermore, the gate is robust to fluctuations in the microwave Rabi frequency and is decoupled from phonon dephasing due to a resonant RF or a detuned microwave driving field. This makes this new gate an attractive candidate for the implementation of high-fidelity microwave based multi-qubit gates. The proposal can also be realized in laser-based set-ups.
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Publication status
- Published
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- Published version
Journal
New Journal of PhysicsISSN
1367-2630Publisher
IOP PublishingExternal DOI
Volume
17Page range
043008Department affiliated with
- Physics and Astronomy Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2015-04-13First Open Access (FOA) Date
2015-04-13First Compliant Deposit (FCD) Date
2015-04-13Usage metrics
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