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IGZO TFT-based all-enhancement operational amplifier bent to a radius of 5 mm

journal contribution
posted on 2023-06-08, 19:59 authored by C Zysset, Niko Munzenrieder, L Petti, L Buthe, G A Salvatore, G Troster
An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 µm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 µW, regardless whether the circuit is flat or bent.

History

Publication status

  • Published

Journal

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Issue

11

Volume

34

Page range

1394-1396

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2015-02-06

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    University of Sussex (Publications)

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