Henderson, R K, Rae, B R and Li, D-U (2014) Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM). In: Durini, Daniel (ed.) High performance silicon imaging: fundamentals and applications of CMOS and CCD sensors. Elsevier, pp. 312-347.
Full text not available from this repository.Abstract
This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.
Item Type: | Book Section |
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Schools and Departments: | School of Engineering and Informatics > Engineering and Design |
Subjects: | Q Science > QC Physics > QC0350 Optics. Light > QC0450 Spectroscopy T Technology > TR Photography > TR0250 Cameras |
Depositing User: | David Day-Uei Li |
Date Deposited: | 02 Feb 2015 08:19 |
Last Modified: | 12 Feb 2015 14:25 |
URI: | http://sro.sussex.ac.uk/id/eprint/52662 |