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Fabrication study of GaAs mesa diodes for X-ray detection

journal contribution
posted on 2023-06-08, 18:14 authored by J S Ng, X Meng, J E Lees, Anna BarnettAnna Barnett, C H Tan
A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated with an 55Fe radioisotope source.

History

Publication status

  • Published

Journal

Journal of Instrumentation

ISSN

1748-0221

Publisher

Institute of Physics

Volume

9

Page range

T08005

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2014-09-09

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