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Determination of the electron-hole pair creation energy in Al0.8Ga0.2As

journal contribution
posted on 2023-06-08, 16:19 authored by Anna BarnettAnna Barnett, J E Lees, D J Bassford, J S Ng
The average energy consumed in the creation of an electron-hole pair (commonly called the electron-hole pair creation energy) in the compound semiconductor Al0.8Ga0.2As has been experimentally measured for the first time at X-ray energies using 55Fe and 109Cd radioisotope sources and a GaAs X-ray photodiode as a reference detector. The value measured (5.1 eV ± 0.08 eV at 294 K) is compared to values previously estimated in the literature. © 2012 IOP Publishing Ltd and Sissa Medialab srl.

History

Publication status

  • Published

Journal

Journal of Instrumentation

ISSN

1748-0221

Publisher

Institute of Physics

Volume

7

Page range

P06016-P06016

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2013-11-13

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