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The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
journal contribution
posted on 2023-06-08, 08:37 authored by W C H Choy, P J Hughes, B L Weiss, E H Li, K Hong, D PavlidisThe effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures.
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Publication status
- Published
Journal
Applied Physics LettersISSN
0003-6951Publisher
American Institute of PhysicsPublisher URL
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Issue
3Volume
72Page range
338-340Department affiliated with
- Engineering and Design Publications
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- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
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