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The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

journal contribution
posted on 2023-06-08, 08:37 authored by W C H Choy, P J Hughes, B L Weiss, E H Li, K Hong, D Pavlidis
The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures.

History

Publication status

  • Published

Journal

Applied Physics Letters

ISSN

0003-6951

Publisher

American Institute of Physics

Issue

3

Volume

72

Page range

338-340

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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