Scanning electron microscopy of dopant distribution in semiconductors

Merli, P G, Morandi, V, Savini, G, Ferroni, M and Sberveglieri, G (2005) Scanning electron microscopy of dopant distribution in semiconductors. Applied Physics Letters, 86 (10). p. 101916. ISSN 0003-6951

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We show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size—values of 1 nm or even lower are possible in the present instruments—while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens.

Item Type: Article
Additional Information: A characterization of the doping profile in silicon using the electron microscope technique. GS carried out computer simulations to predict the optimal sample/probe distance for the best image resolutions. GS is corresponding author.
Schools and Departments: School of Life Sciences > Chemistry
Depositing User: EPrints Services
Date Deposited: 06 Feb 2012 20:58
Last Modified: 07 Jun 2012 09:35
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