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Peierls barriers and core properties of partial dislocations in SiC
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posted on 2023-06-08, 08:12 authored by G Savini, M I Heggie, Sven ÖbergFirst-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation cores and the Peierls barriers of the first kind are chargestate dependent. In intrinsic bulk the partials are stable in the neutral asymmetric reconstructions. These reconstructions have no deep states and are characterized by high Peierls barriers. In strongly doped regime the symmetric reconstructions can become more stable. These reconstructions are always electrically active with a half filled band across the band gap. In particular the symmetric reconstructions of the 30° partial have a lower Peierls barriers than the respective asymmetric ones and could be the cause of the 1.8 eV electroluminescence peak observed under carrier injection conditions.
History
Publication status
- Published
ISSN
02555476Issue
PART1Volume
527-52Page range
359-362Presentation Type
- paper
Event name
International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005);Event location
Pittsburgh, PA; 18 September 2005 through 23 September 2005; Code 70892Event type
conferenceISBN
978-087849425-5Department affiliated with
- Chemistry Publications
Notes
Published in: Materials Science ForumFull text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
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