Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures

Hughes, Padraig J, Weiss, Bernard L, Tlali, Spirit and Jackson, Howard E (1997) Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures. Journal of Vacuum Science and Technology B, 15 (4). pp. 845-848. ISSN 1071-1023

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The effects of low dose (10(14) ions/cm(2)) oxygen implantation on the subband structure of an AlGaAs/GaAs single quantum well is reported here using photoluminescence and photoreflectance spectroscopy. Postimplantation rapid thermal annealing at 900 degrees C up to 180 s induces compositional interdiffusion resulting in enhanced transition energy shifts and a reduction in the photoluminescence count rate. Comparisons of transition energy shifts show that the electron two to heavy-hole two transition energy is more sensitive than the ground state electron to heavy-hole transition for these annealing conditions.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Bernard Weiss
Date Deposited: 06 Feb 2012 20:28
Last Modified: 02 May 2012 14:47
URI: http://sro.sussex.ac.uk/id/eprint/26079
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