Ewels, C P, Leoni, S, Heggie, M I, Jemmer, P, Hernandez, E, Jones, R and Briddon, P R (2000) Hydrogen Interaction with Dislocations in Si. Physical Review Letters, 84 (4). 690 - 693. ISSN 0031-9007

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Abstract

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H? With the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy

Item Type:	Article
Schools and Departments:	School of Life Sciences > Chemistry
Depositing User:	Malcolm Heggie
Date Deposited:	06 Feb 2012 20:28
Last Modified:	03 Jul 2019 01:10
URI:	http://sro.sussex.ac.uk/id/eprint/26023

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