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Density-functional theory calculations on H defects in Si

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posted on 2023-06-08, 05:44 authored by N Martsinovich, A L Rosa, M I Heggie, C P Ewels, P R Briddon
We use first principles calculations and elasticity theory to study hydrogen aggregation in silicon. We discuss possible structures of small hydrogen complexes containing 4-12 H atoms and demonstrate that the lowest-energy structure is the hydrogenated glide dislocation loop. We employ elasticity theory of dislocation interaction to show that the dislocation loop is likely to grow in one dimension forming the dislocation dipole. Extending the study to larger numbers of H, we show that the hydrogenated glide dislocation dipole is favoured for H aggregates infinite in one dimension. We discuss the route for its expansion leading to the formation of two-dimensional H aggregates or platelets.

History

Publication status

  • Published

ISSN

09214526

Volume

340-34

Page range

654-658

Presentation Type

  • paper

Event name

Proceedings of the 22nd International Conference on Defects in (ICDS-22

Event type

conference

Department affiliated with

  • Chemistry Publications

Notes

Publish in: Physica B: Condensed Matter

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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