Savini, G, Blumenau, A T, Heggie, M I and Öberg, S (2007) Structure and energy of partial dislocations in wurtzite-GaN. In: International Conference on Extended Defects in Semiconductors, EDS 2006; Halle, Halle; 17 September 2006 through 22 September 2006; Code 72959.

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Abstract

First-principle calculations have shown that both the partials can be electrically active. In particular we have shown the Ga(g) core partials are a good candidate for the observed absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The symmetric and asymmetric reconstructions have relatively close formation energies. Our results have suggested that the asymmetric reconstructions, characterized by strong bonds along the dislocation line are favourable in intrinsic materials. However, in strongly p and n-type materials or in high stress field the symmetric reconstructions can become energetically more stable. These reconstructions are always electrically active with a deep band across the forbidden gap.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	Publish in: Physica Status Solidi (C) Current Topics in Solid State Physics
Schools and Departments:	School of Life Sciences > Chemistry
Depositing User:	Malcolm Heggie
Date Deposited:	06 Feb 2012 18:45
Last Modified:	19 Mar 2012 15:11
URI:	http://sro.sussex.ac.uk/id/eprint/18211

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