Hughes, P J, Knights, A P, Weiss, B L, Kuna, S, Coleman, P G and Ojha, S (1999) High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides. Applied Physics Letters, 74 (22). pp. 3311-3313. ISSN 0003-6951

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Abstract

The possibility of using keV proton implantation at 800 degrees C to enhance the photosensitivity of Ge-doped silica has been investigated. Room temperature implantation induced defects indicated by absorption at ultraviolet (UV) (<200 nm) and visible wavelengths (>550 nm) were annealed during implantation at 800 degrees C to leave stable photosensitive neutral oxygen vacancy (NOV) centers with an absorption peak at similar to 240 nm. The stable NOV defects were photochemically bleached after UV exposure, a process which is accompanied by a change in UV absorption. Positron annihilation spectroscopy demonstrated the effectiveness of implantation at 800 degrees C in annealing the implantation induced damage.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Depositing User:	Bernard Weiss
Date Deposited:	06 Feb 2012 18:24
Last Modified:	07 Jun 2012 09:40
URI:	http://sro.sussex.ac.uk/id/eprint/16108

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