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High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides

journal contribution
posted on 2023-06-07, 19:50 authored by P J Hughes, A P Knights, B L Weiss, S Kuna, P G Coleman, S Ojha
The possibility of using keV proton implantation at 800 degrees C to enhance the photosensitivity of Ge-doped silica has been investigated. Room temperature implantation induced defects indicated by absorption at ultraviolet (UV) (<200 nm) and visible wavelengths (>550 nm) were annealed during implantation at 800 degrees C to leave stable photosensitive neutral oxygen vacancy (NOV) centers with an absorption peak at similar to 240 nm. The stable NOV defects were photochemically bleached after UV exposure, a process which is accompanied by a change in UV absorption. Positron annihilation spectroscopy demonstrated the effectiveness of implantation at 800 degrees C in annealing the implantation induced damage.

History

Publication status

  • Published

Journal

Applied Physics Letters

ISSN

0003-6951

Publisher

American Institute of Physics

Issue

22

Volume

74

Page range

3311-3313

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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