SiegeleBrown22 W Hensinger 13April2022.pdf (3.02 MB)
Fabrication of surface ion traps with integrated current carrying wires enabling high magnetic field gradients
journal contribution
posted on 2023-06-10, 03:36 authored by Martin SiegeleMartin Siegele, Seokjun Hong, Foni Le Brun-RicalensFoni Le Brun-Ricalens, Samuel HileSamuel Hile, Sebastian WeidtSebastian Weidt, Winfried HensingerWinfried HensingerA major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer's measured sheet resistance of 1.12 mO/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 µO/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T m-1 at the ion position, which is 125 µm from the trap surface for the particular anti-parallel wire pair in our design.
History
Publication status
- Published
File Version
- Published version
Journal
Quantum Science and TechnologyISSN
2058-9565Publisher
IOP PublishingExternal DOI
Issue
3Volume
7Page range
1-8Article number
a034003Department affiliated with
- Physics and Astronomy Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2022-05-19First Open Access (FOA) Date
2022-05-19First Compliant Deposit (FCD) Date
2022-05-18Usage metrics
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