Flexible CMOS electronics based on p-type Ge₂Sb₂Te₅ and n-type InGaZnO₄ semiconductors

Daus, A, Han, S, Knobelspies, S, Cantarella, G, Vogt, C, Münzenrieder, N and Troster, G (2018) Flexible CMOS electronics based on p-type Ge₂Sb₂Te₅ and n-type InGaZnO₄ semiconductors. Electron Devices Meeting (IEDM), 2017 IEEE International, San Francisco, CA, USA, 2-6 December 2017. Published in: Electron Devices Meeting (IEDM), 2017 IEEE International. 8.1.1-8.1.4. Institute of Electrical and Electronics Engineers ISSN 2156-017X ISBN 9781538635599

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Abstract

Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

Item Type: Conference Proceedings
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Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 01 Feb 2018 14:02
Last Modified: 01 Feb 2018 14:03
URI: http://sro.sussex.ac.uk/id/eprint/73279

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