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High temperature GaAs X-ray detectors
journal contribution
posted on 2023-06-09, 09:39 authored by Grammatiki LioliouGrammatiki Lioliou, Michael WhitakerMichael Whitaker, Anna BarnettAnna BarnettTwo GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100?°C to –20?°C. The devices had 10?µm thick i layers with different diameters: 200?µm (D1) and 400?µm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50?kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9?keV) decreased from 2.00?keV at 100?°C to 0.66?keV at –20?°C for the spectrometer with D1, and from 2.71?keV at 100?°C to 0.71?keV at –20?°C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.
Funding
Radioisotope Microbatteries; G1951; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/P001815/1
In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining Applications; G1537; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M004635/1
History
Publication status
- Published
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- Published version
Journal
Journal of Applied PhysicsISSN
0021-8979Publisher
AIP PublishingExternal DOI
Volume
122Page range
244506Department affiliated with
- Engineering and Design Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2018-01-08First Open Access (FOA) Date
2018-01-08First Compliant Deposit (FCD) Date
2018-01-08Usage metrics
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