High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon

Broome, M A, Watson, T F, Keith, D, Gorman, S K, House, M G, Keizer, J G, Hile, S J, Baker, W and Simmons, M Y (2017) High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon. Physical Review Letters (PRL), 119 (4). ISSN 0031-9007

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Abstract

In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision-placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4 ± 0.2%. We measure the triplet-minus relaxation time to be of the order 3 s at 2.5 T and observe its predicted decrease as a function of magnetic field, reaching 0.5 s at 1 T.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Samuel Hile
Date Deposited: 12 Jan 2018 12:11
Last Modified: 12 Jan 2018 12:12
URI: http://sro.sussex.ac.uk/id/eprint/71493

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