Probing the quantum states of a single atom transistor at microwave frequencies

Tettamanzi, Giuseppe Carlo, Hile, Samuel James, House, Matthew Gregory, Fuechsle, Martin, Rogge, Sven and Simmons, Michelle Y (2016) Probing the quantum states of a single atom transistor at microwave frequencies. ACS Nano, 11 (3). pp. 2444-2451. ISSN 1936-0851

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Abstract

The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations.

Item Type: Article
Keywords: monolayer-doped electrodes; phosphorus; pulse spectroscopy; relaxation rates; silicon; single atom transistor
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Samuel Hile
Date Deposited: 12 Jan 2018 12:01
Last Modified: 12 Jan 2018 12:02
URI: http://sro.sussex.ac.uk/id/eprint/71492

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