Extracting inter-dot tunnel couplings between few donor quantum dots in silicon

Gorman, S K, Broome, M A, Keizer, J G, Watson, T F, Hile, S J, Baker, W J and Simmons, M Y (2016) Extracting inter-dot tunnel couplings between few donor quantum dots in silicon. New Journal of Physics, 18 (5). 053041. ISSN 1367-2630

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Abstract

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the
ability to simply and reliably measure and control the coherent electron interaction strength, known
as the tunnel coupling, tc. Here, we describe a method to extract the tc between two quantum dots
(QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few
donor triple QD tunnel coupled to a nearby single-electron transistor(SET)in silicon. The device was
patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct
measurement of the tunnel coupling for a given inter-dot distance. We extract tc = ± 5.5 1.8 GHz
and tc = ± 2.2 1.3 GHz between each of the nearest-neighbour QDs which are separated by 14.5 nm
and 14.0 nm, respectively. The technique allows for an accurate measurement of tc for nanoscale
devices even when it is smaller than the electron temperature and is an ideal characterisation tool for
multi-dot systems with a charge sensor

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Samuel Hile
Date Deposited: 15 Jan 2018 08:07
Last Modified: 15 Jan 2018 08:08
URI: http://sro.sussex.ac.uk/id/eprint/71490

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