Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

Kobayashi, T, van der Heijden, J, House, M G, Hile, S J, Asshoff, P, Gonzalez-Zalba, M F, Vinet, M, Simmons, M Y and Rogge, S (2016) Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system. Applied Physics Letters, 108 (15). p. 152102. ISSN 0003-6951

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Abstract

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Samuel Hile
Date Deposited: 15 Jan 2018 08:02
Last Modified: 15 Jan 2018 08:02
URI: http://sro.sussex.ac.uk/id/eprint/71489

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