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Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system
journal contribution
posted on 2023-06-09, 08:58 authored by T Kobayashi, J van der Heijden, M G House, Samuel HileSamuel Hile, P Asshoff, M F Gonzalez-Zalba, M Vinet, M Y Simmons, S RoggeWe report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240?µeV with an electric field dependence 1.2?±?0.2?meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.
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- Published
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- Published version
Journal
Applied Physics LettersISSN
0003-6951Publisher
AIP PublishingExternal DOI
Issue
15Volume
108Page range
152102Department affiliated with
- Physics and Astronomy Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2018-01-15First Open Access (FOA) Date
2018-01-15First Compliant Deposit (FCD) Date
2018-01-15Usage metrics
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