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Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

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posted on 2023-06-09, 08:58 authored by T Kobayashi, J van der Heijden, M G House, Samuel HileSamuel Hile, P Asshoff, M F Gonzalez-Zalba, M Vinet, M Y Simmons, S Rogge
We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240?µeV with an electric field dependence 1.2?±?0.2?meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

History

Publication status

  • Published

File Version

  • Published version

Journal

Applied Physics Letters

ISSN

0003-6951

Publisher

AIP Publishing

Issue

15

Volume

108

Page range

152102

Department affiliated with

  • Physics and Astronomy Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2018-01-15

First Open Access (FOA) Date

2018-01-15

First Compliant Deposit (FCD) Date

2018-01-15

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