Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology

Petti, Luisa, Loghin, Florin, Cantarella, Giuseppe, Vogt, Christia, Munzenrieder, Niko, Abdellah, Alaa, Becherer, Markus, Haeberle, Tobias, Daus, Alwin, Salvatore, Giovanni, Troster, Gerhar and Lugli, Paolo (2017) Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology. IEEE Electron Device Letters, 38 (11). pp. 1536-1539. ISSN 0741-3106

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Abstract

In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated single walled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using a maximum process temperature of 150 °C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from 3.5 V/V up to 27.2 V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifiers.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 23 Oct 2017 10:57
Last Modified: 23 Oct 2017 10:57
URI: http://sro.sussex.ac.uk/id/eprint/70595

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