Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell

Butera, S, Whitaker, M D C, Krysa, A B and Barnett, A M (2017) Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell. Journal of Physics D: Applied Physics, 50. p. 345101. ISSN 0022-3727

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Abstract

A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range −20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at −20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion ef ciency were also observed when the temperature was increased: at −20 °C, the open circuit voltage and the cell internal conversion ef ciency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at −20 °C.

Item Type: Article
Keywords: InGaP, betavoltaic, semiconductors
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
Depositing User: Silvia Butera
Date Deposited: 02 Aug 2017 11:10
Last Modified: 02 Aug 2017 11:52
URI: http://sro.sussex.ac.uk/id/eprint/69544

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Project NameSussex Project NumberFunderFunder Ref
High Efficiency Betavoltaic CellsG1455STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/M002772/1
UnsetUnsetSTFCST/P001815/1