Charge trapping mechanism leading to sub-60-mV/decade-Swing FETs

Daus, Alwin, Vogt, Christian, Munzenrieder, Niko, Petti, Luisa, Knobelspies, Stefan, Cantarella, Giuseppe, Luisier, Mathieu, Salvatore, Giovanni A and Troster, Gerhard (2017) Charge trapping mechanism leading to sub-60-mV/decade-Swing FETs. IEEE Transactions on Electron Devices, 64 (7). pp. 2789-2796. ISSN 0018-9383

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Abstract

In this work, we present a novel method to reduce the subthreshold swing of field-effect transistors below 60 mV/dec. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to subthreshold swing reduction. We experimentally investigate the impact of charge exchange between a Cu gate electrode and a 5 nm thick amorphous Al2O3 gate dielectric in an InGaZnO4 thin-film transistor. Positive trap charges are generated inside the gate dielectric while the semiconductor is in accumulation. During the subsequent de-trapping, the subthreshold swing diminishes to a minimum value of 46 mV/dec at room temperature. Furthermore, we relate the charge trapping/de-trapping effects to a negative capacitance behavior of the Cu/Al2O3 metal-insulator structure.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 21 Jun 2017 08:56
Last Modified: 21 Jun 2017 09:56
URI: http://sro.sussex.ac.uk/id/eprint/68771

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