Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

Petti, Luisa, Pattanasattayavong, Pichaya, Lin, Yen-Hung, Münzenrieder, Niko, Cantarella, Giuseppe, Yaacobi-Gross, Nir, Yan, Feng, Tröster, Gerhard and Anthopoulos, Thomas D (2017) Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits. Applied Physics Letters, 110 (11). a113504. ISSN 0003-6951

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Abstract

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on freestanding plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V1 s 1 and 0.013 cm2 V1 s 1 , respectively, current on/off ratio in the range 102 –104 , and maximum operating voltages between 3.5 and 10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as 3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 17 Mar 2017 15:47
Last Modified: 11 Sep 2017 08:14
URI: http://sro.sussex.ac.uk/id/eprint/67126

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