Direct growth of ZnSe and CdSe on (100) InAs substrates

Butera, Silvia, Moug, Richard T, Vines, Peter, Buller, Gerald S and Prior, Kevin A (2014) Direct growth of ZnSe and CdSe on (100) InAs substrates. Physica Status Solidi (C), 11 (7-8). pp. 1210-1212. ISSN 1862-6351

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Abstract

ZnSe and CdSe layers have been grown on InAs substrates using molecular beam epitaxy (MBE) without the need for a III-V and II-VI dual chamber system. This paper reports on the optimisation of a chemical oxide removal process using sulphur passivation. This removes the need for conventional in vacuo oxide removal under As overpressure that is used to prevent the formation of high densities of In droplets. X-ray and photoluminescence characterisation of the samples confirms single crystal growth.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
Depositing User: Silvia Butera
Date Deposited: 17 Mar 2017 15:34
Last Modified: 17 Mar 2017 15:34
URI: http://sro.sussex.ac.uk/id/eprint/67124
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