Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

Daus, Alwin, Vogt, Christian, Münzenrieder, Niko, Petti, Luisa, Knobelspies, Stefan, Cantarella, Giuseppe, Luisier, Mathieu, Salvatore, Giovanni A and Tröster, Gerhard (2016) Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators. Journal of Applied Physics, 120 (24). p. 244501. ISSN 0021-8979

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Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
Depositing User: Niko Munzenrieder
Date Deposited: 03 Jan 2017 15:35
Last Modified: 02 Sep 2017 09:18
URI: http://sro.sussex.ac.uk/id/eprint/66002

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